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| SI1302DL New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 0.700 @ VGS = 4.5 V 0.53 rDS(on) (W) 0.480 @ VGS = 10 V ID (A) 0.64 SOT-323 SC-70 (3-LEADS) G 1 Marking Code KA XX YY Lot Traceability and Date Code Part # Code Top View 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C IDM IS 0.26 0.31 0.20 -55 to 150 Symbol VDS VGS 5 secs 30 Steady State Unit V "20 0.64 0.60 0.48 1.5 0.23 0.28 0.18 ID 0.51 A W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71249 S-02367--Rev. C, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 355 380 285 Maximum 400 450 340 Unit _C/W C/W 1 SI1302DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.6 A VGS = 4.5 V, ID = 0.2 A VDS = 15 V, ID = 0.6 A IS = 0.23 A, VGS = 0 V 1.5 0.410 0.600 0.75 0.8 1.2 0.480 0.700 1 "100 1 5 V nA mA m A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.23 A, di/dt = 100 A/ms VDD = 15 V, RL = 30 W ID ^ 0.5 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 10 V, ID = 0.6 A 0.86 0.24 0.08 5 8 8 7 15 10 15 15 15 30 ns 1.4 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 1.0 Transfer Characteristics 0.8 I D - Drain Current (A) VGS = 10 thru 4 V I D - Drain Current (A) 0.8 0.6 0.6 0.4 3V 0.2 0.4 TC = 125_C 0.2 25_C -55_C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71249 S-02367--Rev. C, 23-Oct-00 SI1302DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 1.6 r DS(on) - On-Resistance ( W ) 1.4 1.2 1.0 0.8 0.6 VGS = 10 V 0.4 0.2 0.0 0.0 10 VGS = 4.5 V C - Capacitance (pF) 60 Ciss Vishay Siliconix Capacitance 50 40 30 Coss Crss 20 0 0.2 0.4 0.6 0.8 1.0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 0.6 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 0.6 A r DS(on) - On-Resistance ( W) (Normalized) 0.4 0.6 0.8 1.0 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0.0 0.2 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 1 1.8 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 1.5 I S - Source Current (A) 1.2 ID = 0.6 A 0.9 TJ = 150_C 0.6 TJ = 25_C 0.3 0.1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71249 S-02367--Rev. C, 23-Oct-00 www.vishay.com 3 SI1302DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 5 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W) 4 3 TA = 25_C 2 -0.2 -0.4 1 -0.6 -50 -25 0 25 50 75 100 125 150 0 10-2 10-1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 360_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71249 S-02367--Rev. C, 23-Oct-00 |
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